Simulation and analysis of metamorphic high electron mobility transistors

In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudomorphic high electron mobility transistors (pHEMTs). The two-dimensional device simulator, MEDICI, is used to solve the Poisson’s equation and the electron/hole current continuity equations. The influences of d-doping concentration and position, gate width, spacer thickness, etc. on the performances of HEMTs are explored. It shows clearly that mHEMTs have higher transconductances, drain currents and DC voltage swings than pHEMTs. r 2006 Elsevier Ltd. All rights reserved.